SKM200GB126D

Модули IGBT

кол-во в упаковке: 1

IGBT MODULE, DUAL, 1200V Transistor Type IGBT Module Transistor Polarity N Channel Voltage, Vces 1200V Current Ic Continuous a Max 260A Voltage, Vce Sat Max 2.15V Case Style SEMITRANS 3 Termination Type Screw Collector-to-Emitter Breakdown Voltage 1200V Current Ic Continuous b Max 190A Current Ic av 260A Current, Icm Pulsed 200A External Depth 61.4mm Fixing Centres 93mm Fixing Hole Diameter 5.4mm Power, Pd 220W SMD Marking SEMITRANS 3 Temperature, Current 25C Time, Rise 40ns Transistors, No. of 2 Width, External 105mm Voltage 1200V
Кол-во ключей в модуле 2, Напряжение К-Э 1.2 кВ, Рабочий ток при 25°C 150 А