:Fabrication Technology
NPN Transistor
:Half Intensity Angle Degrees ()
24
:Maximum Collector Current (mA)
15
:Maximum Collector-Emitter Saturation Voltage (V)
0.2
:Maximum Collector-Emitter Voltage (V)
35
:Maximum Dark Current (nA)
200
:Maximum Fall Time (ns)
7000
:Maximum Light Current (uA)
4500
:Maximum Operating Temperature (C)
100
:Maximum Power Dissipation (mW)
165
:Maximum Rise Time (ns)
7000
:Minimum Operating Temperature (C)
-40
:Number of Channels per Chip
1
:Peak Wavelength (nm)
860
:Phototransistor Type
Phototransistor
:Standard Package Name
T-1
:Viewing Orientation
Top View