Fabrication Technology
NPN Transistor
Half Intensity Angle Degrees ()
24
Maximum Collector Current (mA)
15
Maximum Collector-Emitter Saturation Voltage (V)
0.2
Maximum Collector-Emitter Voltage (V)
35
Maximum Dark Current (nA)
200
Maximum Fall Time (ns)
7000
Maximum Light Current (uA)
4500
Maximum Operating Temperature (C)
100
Maximum Power Dissipation (mW)
165
Maximum Rise Time (ns)
7000
Minimum Operating Temperature (C)
-40
Number of Channels per Chip
1
Phototransistor Type
Phototransistor
Standard Package Name
T-1
Viewing Orientation
Top View
Oптоэлектроника\Фотоэлементы\Фототранзисторы