:Dimensions
2.9 x 1.5 x 1.1mm
:Drain Gate On-Capacitance
10пФ
:Id - непрерывный ток утечки
50 mA
:Idss Drain-Source Cut-off Current
10 → 17mA
:Maximum Continuous Drain Current (mA)
50
:Maximum Drain Gate Voltage
-15V
:Maximum Drain Gate Voltage (V)
-15
:Maximum Drain Source Voltage
15 V
:Maximum Drain Source Voltage (V)
15
:Maximum Operating Temperature
+150 C
:Maximum Operating Temperature (C)
150
:Maximum Power Dissipation (mW)
200
:Minimum Drain Saturation Current (mA)
10
:Minimum Operating Temperature (C)
-55
:Mounting Type
Поверхностный монтаж
:Package Height
1.25(Max)
:Package Length
3.05(Max)
:Pd - рассеивание мощности
200 mW
:Source Gate On-Capacitance
3pF
:Standard Package Name
SC
:Transistor Configuration
Single
:Vds - напряжение пробоя сток-исток
15 V
:Подкатегория
Transistors
:Полярность транзистора
N-Channel
:Размер фабричной упаковки
3000
:Ток стока при Vgs=0
50 mA
:Торговая марка
ON Semiconductor