:Channel Mode
Enhancement
:EU RoHS
Compliant with Exemption
:Maximum Continuous Drain Current (A)
10
:Maximum Drain Source Resistance (mOhm)
550@10V
:Maximum Drain Source Voltage (V)
400
:Maximum Gate Source Voltage (V)
30
:Maximum Operating Temperature (C)
150
:Maximum Power Dissipation (mW)
3100
:Minimum Operating Temperature (C)
-55
:Number of Elements per Chip
1
:Package Height
4.83(Max)
:Package Length
10.41(Max)
:Product Category
Power MOSFET
:Standard Package Name
TO-263
:Typical Fall Time (ns)
22
:Typical Gate Charge @ 10V (nC)
36(Max)
:Typical Gate Charge @ Vgs (nC)
36(Max)@10V
:Typical Input Capacitance @ Vds (pF)
1030@25V
:Typical Rise Time (ns)
35
:Typical Turn-Off Delay Time (ns)
24
:Typical Turn-On Delay Time (ns)
10
:Категория продукта
МОП-транзистор
:Крутизна характеристики S,А/В
4.9
:Максимальное пороговое напряжение затвор-исток Uзи макс.,В
4
:Размер фабричной упаковки
1000
:Сопротивление канала в открытом состоянии Rси вкл.,мОм
550
:Торговая марка
Vishay / Siliconix
:Упаковка / блок
TO-263-3