:Channel Mode
Enhancement
:Dimensions
5 x 4 x 1.5mm
:Forward Diode Voltage
1V
:Forward Transconductance
3.1s
:Maximum Continuous Drain Current
5.8 A
:Maximum Drain Source Resistance
70 mΩ
:Maximum Drain Source Voltage
30 V
:Maximum Gate Source Voltage
-20 V, +20 V
:Maximum Operating Temperature
+150 C
:Maximum Power Dissipation
2.5 W
:Minimum Gate Threshold Voltage
1V
:Minimum Operating Temperature
-55 C
:Mounting Type
Surface Mount
:Number of Elements per Chip
1
:Transistor Configuration
Single
:Typical Gate Charge @ Vgs
59 nC @ 10 V
:Typical Input Capacitance @ Vds
1100 pF @ -25 V
:Typical Turn-Off Delay Time
45 ns
:Typical Turn-On Delay Time
16 ns