:Base Product Number
IRF540 ->,
:Channel Mode
Enhancement
:Current - Continuous Drain (Id) @ 25ВC
33A (Tc)
:Dimensions
10.67 x 4.83 x 9.65mm
:Drain to Source Voltage (Vdss)
100V
:Drive Voltage (Max Rds On, Min Rds On)
10V
:Forward Diode Voltage
1.2V
:Forward Transconductance
21s
:Gate Charge (Qg) (Max) @ Vgs
71nC @ 10V
:Input Capacitance (Ciss) (Max) @ Vds
1960pF @ 25V
:Maximum Continuous Drain Current
33 A
:Maximum Drain Source Resistance
44 mΩ
:Maximum Drain Source Voltage
100 V
:Maximum Gate Source Voltage
-20 V, +20 V
:Maximum Operating Temperature
+175 C
:Maximum Power Dissipation
130 W
:Minimum Operating Temperature
-55 C
:Moisture Sensitivity Level (MSL)
1 (Unlimited)
:Mounting Type
Through Hole
:Number of Elements per Chip
1
:Operating Temperature
-55ВC ~ 175ВC (TJ)
:Package / Case
TO-262-3 Long Leads, IВІPak, TO-262AA
:Package Type
I2PAK (TO-262)
:Power Dissipation (Max)
130W (Tc)
:Rds On (Max) @ Id, Vgs
44mOhm @ 16A, 10V
:REACH Status
REACH Unaffected
:RoHS Status
ROHS3 Compliant
:Supplier Device Package
TO-262
:Technology
MOSFET (Metal Oxide)
:Transistor Configuration
Single
:Typical Gate Charge @ Vgs
71 nC @ 10 V
:Typical Input Capacitance @ Vds
1960 pF @ 25 V
:Typical Turn-Off Delay Time
39 ns
:Typical Turn-On Delay Time
11 ns
:Vgs(th) (Max) @ Id
4V @ 250ВA