:Fabrication Technology
NPN Transistor
:Half Intensity Angle Degrees ()
80
:Maximum Collector Current (mA)
50
:Maximum Collector-Emitter Saturation Voltage (V)
0.3
:Maximum Collector-Emitter Voltage (V)
70
:Maximum Dark Current (nA)
100
:Maximum Light Current (uA)
1200(Typ)
:Maximum Operating Temperature (C)
125
:Maximum Power Dissipation (mW)
250
:Number of Channels per Chip
1
:Peak Wavelength (nm)
850
:Phototransistor Type
Phototransistor
:Supplier Package
TO-206AA
:Viewing Orientation
Top View