Fabrication Technology
NPN Transistor
Half Intensity Angle Degrees ()
80
Maximum Collector Current (mA)
50
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Maximum Collector-Emitter Voltage (V)
70
Maximum Dark Current (nA)
100
Maximum Light Current (uA)
1200(Typ)
Maximum Operating Temperature (C)
125
Maximum Power Dissipation (mW)
250
Number of Channels per Chip
1
Phototransistor Type
Phototransistor
Supplier Package
TO-206AA
Viewing Orientation
Top View
Oптоэлектроника\Фотоэлементы\Фототранзисторы