EU RoHS
Compliant with Exemption
Maximum Continuous Drain Current (A)
2.5
Maximum Drain Source Resistance (mOhm)
3500@10V
Maximum Drain Source Voltage (V)
600
Maximum Gate Source Voltage (V)
30
Maximum Power Dissipation (mW)
56800
Number of Elements per Chip
1
Product Category
Power MOSFET
Typical Fall Time (ns)
16
Typical Gate Charge @ 10V (nC)
9.9
Typical Gate Charge @ Vgs (nC)
9.9@10V
Typical Input Capacitance @ Vds (pF)
304@25V
Typical Rise Time (ns)
17
Typical Turn-Off Delay Time (ns)
24
Typical Turn-On Delay Time (ns)
17
Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N SMD