Dimensions
2.9 x 1.5 x 1.1mm
Drain Gate On-Capacitance
10пФ
Idss Drain-Source Cut-off Current
16 → 32mA
Maximum Drain Gate Voltage
-15V
Maximum Drain Source Voltage
15 V
Maximum Operating Temperature
+150 C
Mounting Type
Поверхностный монтаж
Source Gate On-Capacitance
2.9pF
Transistor Configuration
Single
Semiconductors N-канальный JFET, ON Semiconductor