Base Product Number
2N7002 ->,
Continuous Drain Current (Id) @ 25ВC
230mA
Current - Continuous Drain (Id) @ 25ВC
230mA
Drain to Source Voltage (Vdss)
60V
FET Type
2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Maximum Continuous Drain Current
115 mA
Maximum Continuous Drain Current (A)
0.23
Maximum Continuous Drain Current on PCB @ TC=25C (A)
0.23
Maximum Diode Forward Voltage (V)
1.5
Maximum Drain Source Resistance
13.5 Ω
Maximum Drain Source Resistance (mOhm)
7500@5V
Maximum Drain Source Voltage
60 В
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Leakage Current (nA)
10
Maximum Gate Source Voltage
-20 В, +20 В
Maximum Gate Source Voltage (V)
20
Maximum Gate Threshold Voltage
2V
Maximum Gate Threshold Voltage (V)
2
Maximum Junction Ambient Thermal Resistance on PCB (C/W)
318
Maximum Operating Temperature
+150 C
Maximum Operating Temperature (C)
150
Maximum Positive Gate Source Voltage (V)
20
Maximum Power Dissipation (mW)
400
Maximum Power Dissipation on PCB @ TC=25C (W)
0.4
Maximum Pulsed Drain Current @ TC=25C (A)
0.8
Minimum Gate Threshold Voltage (V)
1
Minimum Operating Temperature
-55 C
Minimum Operating Temperature (C)
-55
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Mounting Type
Surface Mount
Number of Elements per Chip
2
Operating Junction Temperature (C)
-55 to 150
Operating Temperature
-55ВC ~ 150ВC (TJ)
Package
Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ
Package / Case
6-TSSOP, SC-88, SOT-363
Package Type
SOT-363 (SC-88)
Power Dissipation-Max (Ta=25ВC)
310mW
Product Category
Small Signal
Rds On (Max) @ Id, Vgs
7.5Ohm @ 50mA, 5V
Rds On - Drain-Source Resistance
7.5О @ 50mA,5V
REACH Status
REACH Unaffected
RoHS Status
ROHS3 Compliant
Standard Package Name
SOT
Supplier Device Package
SOT-363
Supplier Temperature Grade
Commercial
Transistor Configuration
Изолированный
Transistor Material
Кремний
Transistor Polarity
2 N Channel(Double)
Typical Diode Forward Voltage (V)
0.78
Typical Input Capacitance @ Vds (pF)
22@25V
Typical Output Capacitance (pF)
11
Typical Reverse Transfer Capacitance @ Vds (pF)
2@25V
Typical Turn-Off Delay Time (ns)
11
Typical Turn-On Delay Time (ns)
7
Vds - Drain-Source Breakdown Voltage
60V
Vgs - Gate-Source Voltage
2V @ 250uA
Vgs(th) (Max) @ Id
2V @ 250ВA
Количество элементов на ИС
2
Конфигурация транзистора
Изолированный
Максимальная рабочая температура
+150 C
Максимальное напряжение затвор-исток
-20 В, +20 В
Максимальное пороговое напряжение включения
2V
Максимальное рассеяние мощности
200 мВт
Материал транзистора
Кремний
Тип корпуса
SOT-363 (SC-88)
Тип монтажа
Поверхностный монтаж