Base Product Number:
2N7002 ->,
Channel Mode:
Enhancement
Continuous Drain Current (Id) @ 25ВC:
230mA
Current - Continuous Drain (Id) @ 25ВC:
230mA
Drain to Source Voltage (Vdss):
60V
FET Type:
2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Maximum Continuous Drain Current:
115 mA
Maximum Continuous Drain Current (A):
0.23
Maximum Continuous Drain Current on PCB @ TC=25C (A):
0.23
Maximum Diode Forward Voltage (V):
1.5
Maximum Drain Source Resistance:
13.5 Ω
Maximum Drain Source Resistance (mOhm):
7500@5V
Maximum Drain Source Voltage:
60 В
Maximum Drain Source Voltage (V):
60
Maximum Gate Source Leakage Current (nA):
10
Maximum Gate Source Voltage:
-20 В, +20 В
Maximum Gate Source Voltage (V):
20
Maximum Gate Threshold Voltage:
2V
Maximum Gate Threshold Voltage (V):
2
Maximum Junction Ambient Thermal Resistance on PCB (C/W):
318
Maximum Operating Temperature:
+150 C
Maximum Operating Temperature (C):
150
Maximum Positive Gate Source Voltage (V):
20
Maximum Power Dissipation (mW):
400
Maximum Power Dissipation on PCB @ TC=25C (W):
0.4
Maximum Pulsed Drain Current @ TC=25C (A):
0.8
Minimum Gate Threshold Voltage (V):
1
Minimum Operating Temperature:
-55 C
Minimum Operating Temperature (C):
-55
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Number of Elements per Chip:
2
Operating Junction Temperature (C):
-55 to 150
Operating Temperature:
-55ВC ~ 150ВC (TJ)
Package:
Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ
Package / Case:
6-TSSOP, SC-88, SOT-363
Package Type:
SOT-363 (SC-88)
Power Dissipation-Max (Ta=25ВC):
310mW
Product Category:
Small Signal
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 50mA, 5V
Rds On - Drain-Source Resistance:
7.5О @ 50mA,5V
REACH Status:
REACH Unaffected
RoHS Status:
ROHS3 Compliant
Standard Package Name:
SOT
Supplier Device Package:
SOT-363
Supplier Package:
SOT-363
Supplier Temperature Grade:
Commercial
Transistor Configuration:
Изолированный
Transistor Material:
Кремний
Transistor Polarity:
2 N Channel(Double)
Typical Diode Forward Voltage (V):
0.78
Typical Input Capacitance @ Vds (pF):
22@25V
Typical Output Capacitance (pF):
11
Typical Reverse Transfer Capacitance @ Vds (pF):
2@25V
Typical Turn-Off Delay Time (ns):
11
Typical Turn-On Delay Time (ns):
7
Vds - Drain-Source Breakdown Voltage:
60V
Vgs - Gate-Source Voltage:
2V @ 250uA
Vgs(th) (Max) @ Id:
2V @ 250ВA
Количество элементов на ИС:
2
Конфигурация транзистора:
Изолированный
Максимальная рабочая температура:
+150 C
Максимальное напряжение затвор-исток:
-20 В, +20 В
Максимальное пороговое напряжение включения:
2V
Максимальное рассеяние мощности:
200 мВт
Материал транзистора:
Кремний
Тип корпуса:
SOT-363 (SC-88)
Тип монтажа:
Поверхностный монтаж