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ECCNEAR99
Moisture Sensitivity Level (MSL)1 (Unlimited)
PackageTube
RoHS StatusROHS3 Compliant
BrandInfineon
Mounting TypeThrough Hole
Base Product NumberIRF540 -&gt,
HTSUS8541.29.0095
REACH StatusREACH Unaffected
SeriesHEXFET
Minimum Operating Temperature-55 C
Maximum Operating Temperature+175 C
Width4.83mm
Length10.67mm
Operating Temperature-55ВC ~ 175ВC (TJ)
Height9.65mm
Dimensions10.67 x 4.83 x 9.65mm
Package / CaseTO-262-3 Long Leads, IВІPak, TO-262AA
TechnologyMOSFET (Metal Oxide)
Package TypeI2PAK (TO-262)
Supplier Device PackageTO-262
Pin Count3
Power Dissipation (Max)130W (Tc)
Number of Elements per Chip1
Transistor ConfigurationSingle
Maximum Drain Source Voltage100 V
Channel TypeN
Maximum Gate Source Voltage-20 V, +20 V
Maximum Power Dissipation130 W
Transistor MaterialSi
Maximum Continuous Drain Current33 A
Maximum Drain Source Resistance44 mΩ
Typical Gate Charge @ Vgs71 nC @ 10 V
Channel ModeEnhancement
Forward Transconductance21s
Typical Turn-On Delay Time11 ns
Typical Turn-Off Delay Time39 ns
CategoryPower MOSFET
Typical Input Capacitance @ Vds1960 pF @ 25 V
Forward Diode Voltage1.2V
Current - Continuous Drain (Id) @ 25ВC33A (Tc)
Drain to Source Voltage (Vdss)100V
Drive Voltage (Max Rds On, Min Rds On)10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1960pF @ 25V
Rds On (Max) @ Id, Vgs44mOhm @ 16A, 10V
Vgs (Max)В20V
Vgs(th) (Max) @ Id4V @ 250ВA