Вес, г0.026
Ширина1.35мм
Длина2.2мм
Максимальная рабочая температура+150 C
EU RoHSCompliant
ECCN (US)EAR99
Part StatusActive
HTS8541.29.00.95
Minimum Operating Temperature (C)-55
Maximum Operating Temperature (C)150
PackagingTape and Reel
MountingSurface Mount
ECCNEAR99
Moisture Sensitivity Level (MSL)1 (Unlimited)
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ
RoHS StatusROHS3 Compliant
BrandDiodesZetex
Mounting TypeSurface Mount
Base Product Number2N7002 -&gt,
HTSUS8541.21.0095
Тип корпусаSOT-363 (SC-88)
Тип монтажаПоверхностный монтаж
REACH StatusREACH Unaffected
Minimum Operating Temperature-55 C
Maximum Operating Temperature+150 C
Width1.35мм
Operating Temperature-55ВC ~ 150ВC (TJ)
Height1мм
Package / Case6-TSSOP, SC-88, SOT-363
Package TypeSOT-363 (SC-88)
Supplier Device PackageSOT-363
Число контактов6
Pin Count6
ConfigurationDual
Maximum Power Dissipation (mW)400
Standard Package NameSOT
Supplier PackageSOT-363
Package Height0.95
PCB changed6
Lead ShapeGull-wing
Power - Max310mW
AutomotiveNo
Package Length2.15
Package Width1.3
Supplier Temperature GradeCommercial
Количество элементов на ИС2
MilitaryNo
Number of Elements per Chip2
Product CategorySmall Signal
Transistor ConfigurationИзолированный
Maximum Drain Source Voltage60 В
Channel TypeN
Maximum Gate Source Voltage-20 В, +20 В
Тип каналаN
Максимальное напряжение затвор-исток-20 В, +20 В
Continuous Drain Current (Id) @ 25ВC230mA
Transistor Polarity2 N Channel(Double)
Vds - Drain-Source Breakdown Voltage60V
Максимальное рассеяние мощности200 мВт
Transistor MaterialКремний
Конфигурация транзистораИзолированный
Материал транзистораКремний
Maximum Continuous Drain Current115 mA
Maximum Drain Source Resistance13.5 Ω
Channel ModeEnhancement
Maximum Drain Source Voltage (V)60
Maximum Gate Source Voltage (V)20
Maximum Continuous Drain Current (A)0.23
Maximum Drain Source Resistance (mOhm)7500@5V
Typical Input Capacitance @ Vds (pF)22@25V
Typical Turn-Off Delay Time (ns)11
Typical Turn-On Delay Time (ns)7
Power Dissipation-Max (Ta=25ВC)310mW
Rds On - Drain-Source Resistance7.5О @ 50mA,5V
Vgs - Gate-Source Voltage2V @ 250uA
Maximum Gate Threshold Voltage2V
Current - Continuous Drain (Id) @ 25ВC230mA
Drain to Source Voltage (Vdss)60V
FET Type2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
Rds On (Max) @ Id, Vgs7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id2V @ 250ВA
Максимальное пороговое напряжение включения2V
FET FeatureStandard
Maximum Power Dissipation on PCB @ TC=25C (W)0.4
Maximum Positive Gate Source Voltage (V)20
Maximum Continuous Drain Current on PCB @ TC=25C (A)0.23
Maximum Pulsed Drain Current @ TC=25C (A)0.8
Maximum Gate Threshold Voltage (V)2
Operating Junction Temperature (C)-55 to 150
Maximum Gate Source Leakage Current (nA)10
Maximum IDSS (uA)1
Typical Reverse Transfer Capacitance @ Vds (pF)2@25V
Minimum Gate Threshold Voltage (V)1
Typical Output Capacitance (pF)11
Maximum Diode Forward Voltage (V)1.5
Typical Diode Forward Voltage (V)0.78
Maximum Junction Ambient Thermal Resistance on PCB (C/W)318